d0413 tkim tc-00003072/31710ea tkim/o1003tn (koto)/92098ha (kt)/4107ki/9266at, ts no.2040-1/4 http://onsemi.com semiconductor components industries, llc, 2013 december, 2013 2sb1122 bipolar transistor ? 50v, ? 1a, low v ce ( sat ) pnp single pcp stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. applicaitons ? voltage regulators relay drivers, lamp drivers, electrical equipment features ? adoption of fbet process ? ultrasmall size making it easy to provide high-density hybrid ic?s speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector to base voltage v cbo --60 v collector to emitter voltage v ceo --50 v emitter to base voltage v ebo -- 5 v collector current i c -- 1 a collector current (pulse) i cp -- 2 a continued on next page. package dimensions unit : mm (typ) 7007b-004 ordering number : en2040c product & package information ? package : pcp ? jeita, jedec : sc-62, sot-89, to-243 ? minimum packing quantity : 1,000 pcs./reel packing type: td marking electrical connection td 1 : base 2 : collecto r 3 : emitter pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 123 1.5 0.75 top view bottom view 2sb1122s-td-e 2SB1122T-TD-E be lot no. rank 2 3 1
2sb1122 no.2040-2/4 continued from preceding page. parameter symbol conditions ratings unit collector dissipation p c when mounted on ceramic substrate (250mm 2 0.8mm) 1.3 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =--50v, i e =0a --100 na emitter cutoff current i ebo v eb =--4v, i c =0a --100 na dc current gain h fe 1v ce =--2v, i c =--100ma 140* 400* h fe 2v ce =--2v, i c =--1a 30 gain-bandwidth product f t v ce =--10v, i c =--50ma 150 mhz output capacitance cob v cb =--10v, f=1mhz 12 pf collector to emitter saturation voltage v ce (sat) i c =--500ma, i b =--50ma --180 --500 mv base to emitter saturation voltage v be (sat) i c =--500ma, i b =--50ma --0.9 --1.2 v collector to base breakdown voltage v (br)cbo i c =--10 a, i e =0a --60 v collector to emitter breakdown voltage v (br)ceo i c =--1ma, r be = --50 v emitter to base breakdown voltage v (br)ebo i e =--10 a, i c =0a --5 v turn-on time t on see speci ed test circuit. 40 ns storage time t stg 300 ns fall time t f 30 ns * : 2sb1122 is classi ed by 100ma h fe as follows : rank s t h fe 140 to 280 200 to 400 switching time test circuit ordering information device package shipping memo 2sb1122s-td-e pcp 1,000pcs./reel pb free 2SB1122T-TD-E pcp 1,000pcs./reel v r r b v cc = --25v v be =5v + + 50 input output r l 50 100 f 470 f pw=20 s i c =10i b1 = --10i b2 = --500ma d.c. 1% i b1 i b2 i c -- v ce collector to emitter voltage, v ce -- v collector current, i c -- a -- 1 . 0 -- 0 . 6 -- 0 . 4 -- 0 . 2 -- 0 . 8 0 0 --1 --2 --5 -- 4 -- 3 i b =0ma itr08877 --1ma --2ma --8ma --6ma --4ma --10ma --12ma i c -- v be base to emitter voltage, v be -- v collector current, i c -- ma 0 --0.2 --0.4 --0.6 --0.8 --1.2 -- 1 . 0 --1200 --1000 -- 8 0 0 -- 6 0 0 -- 4 0 0 -- 2 0 0 0 itr08879 ta=75 c 25 c --25 c v ce = --2v
2sb1122 no.2040-3/4 h fe -- i c collector current, i c -- ma dc current gain, h fe 2 3 5 5 7 10 7 1000 2 3 5 7 100 23 5 -- 1 0 23 5 --100 23 7 7 57 --1000 itr08881 v ce = --2v ta=75 c 25 c --25 c f t -- i c collector current, i c -- ma gain-bandwidth product, f t -- mhz 523 23 55 -- 1 0 7 7 --100 100 10 2 5 7 5 3 2 3 itr08883 v ce = --10v cob -- v cb collector to base voltage, v cb -- v output capacitance, cob -- pf --1.0 --10 7 3 5 10 2 3 5 2 27 35 -- 1 0 0 27 35 7 5 itr08884 f=1mhz v ce (sat) -- i c collector current, i c -- ma collector to emitter saturation voltage, v ce (sat) -- mv 2 5 7 7 3 2 5 3 --100 -- 1 0 --1000 23 57 57 7 -- 1 0 23 5 --100 2 --1000 itr08885 i c / i b =10 ta=75 c 25 c --25 c v be (sat) -- i c collector current, i c -- ma base to emitter saturation voltage, v be (sat) -- v 2 5 7 7 3 2 5 3 -- 1 . 0 -- 1 0 23 57 57 7 -- 1 0 23 5 --100 2 --1000 itr08887 i c / i b =10 75 c 25 c ta= - -25 c s o a collector current, i c -- a collector to emitter voltage, v ce -- v -- 0 . 1 --0.01 5 7 7 -- 1 . 0 5 3 3 2 2 3 2 --1.0 --10 257 3 -- 1 0 0 257 3 57 itr08889 10ms 1ms 100ms dc operation i cp = --2a i c = --1a ta=25 c single pulse when mounted on ceramic substrate (250mm 2 ? 0.8mm) p c -- ta collector dissipation, p c -- w ambient temperature, ta -- c 0 1.4 1.2 0.8 1.0 0.6 0.4 1.3 0.5 0.2 0 20 40 60 100 120 160 140 80 itr08890 when mounted on ceramic substrate (250mm 2 ? 0.8mm) no heat sink
2sb1122 ps no.2040-4/4 on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner. outline drawing land pattern example 2sb1122s-td-e, 2SB1122T-TD-E mass (g) unit 0.058 * for reference mm unit: mm 2.2 1.0 1.8 1.5 0.9 3.7 1.5 3.0 1.0 45 45
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